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PROFET(R) BTS 410 F2
Smart Highside Power Switch
Features
* Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection
Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation
Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr)
65 V 4.7 ... 42 V 220 m 1.8 A 2.7 A
TO-220AB/5
5 1 Straight leads
5
5 1
Standard
SMD
Application
* C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for inductive loads * Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS(R) technology. Fully protected by embedded protection functions.
+ V bb
3
Voltage source
Overvoltage protection
Current limit
Gate protection
V Logic
Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads
OUT
2
IN
Temperature sensor
5
Load
4
ST
Short circuit detection
GND
(R) PROFET
Load GND
1
Signal GND
1)
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load.
Semiconductor Group
1
03.97
BTS 410 F2
Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 6.6 , td= 400 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. IL = 1.8 A, ZL = 2.3 H, 0 : Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Symbol Vbb VLoad dump4)
Values 65 100 self-limited -40 ...+150 -55 ...+150 50 4.5 1 2 -0.5 ... +6 5.0 5.0
Unit V V A C W J kV V mA
IL Tj Tstg Ptot EAS VESD VIN IIN IST
Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min ---chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): Values typ max -2.5 -75 35 -Unit K/W
2)
3) 4) 5)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.
Semiconductor Group
2
BTS 410 F2 Electrical Characteristics
Parameter and Conditions
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics
Tj=25 C: Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time IN to 90% VOUT: to 10% VOUT: Turn-off time IN RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C
Operating Parameters Operating voltage 6) Undervoltage shutdown
On-state resistance (pin 3 to 5) IL = 1.6 A
RON
--
190 390
220 440 -1
m
IL(ISO) IL(GNDhigh)
1.6 --
1.8 --
A mA s
ton toff
dV /dton -dV/dtoff
12 5 ---
-----
125 85 3 6
V/s V/s
Tj =-40...+150C: Tj =25C: Tj =-40...+150C: Tj =-40...+150C: Undervoltage restart Undervoltage restart of charge pump see diagram page 12 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C: Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: Overvoltage protection7) Ibb=4 mA Tj=-40...+25C: Standby current (pin 3) VIN=0 Tj= 150C:
Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1)8), VIN=5 V, Tj =-40...+150C
6) 7)
Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp)
Vbb(under)
4.7 2.9 2.7 ---42 40 -65 -----
----5.6 0.1 --0.1 70 10 18 -1
42 4.5 4.7 4.9 6.0 -52 ---15 25 20 2.1
V V V V V V V V V A A mA
Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 6.
Semiconductor Group
3
BTS 410 F2
Protection Functions Initial peak short circuit current limit (pin 3 to 5)9), IL(SCp) ( max 450 s if VON > VON(SC) ) Tj =-40C: Tj =25C: =+150C: Tj Overload shutdown current limit IL(SCr) VON= 8 V, Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC)
min value valid only, if input "low" time exceeds 60 s
4.0 3.5 2.0 ---
-5.5 3.5 2.7 --
11 10 7.5 -450
A
A s V
Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C: IL= 1 A, Tj =-40..+150C: Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 10) Diagnostic Characteristics Open load detection current
(on-condition)
VON(CL)
61 --150 ---
68 -8.5 -10 --
73 75 ---32
VON(SC) Tjt Tjt -Vbb
V C K V
Tj=-40 ..150C:
IL (OL)
2 -150
mA
Input and Status Feedback11) Input turn-on threshold voltage Tj =-40..+150C: Tj =-40..+150C: Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 5 V Status invalid after positive input slope Tj=-40 ... +150C: (short circuit) Status invalid after positive input slope Tj=-40 ... +150C: (open load) Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +50 uA: ST low voltage Tj =-40...+150C, IST = +1.6 mA:
VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST SC) td(ST)
1.5 1.0 -1 10 -300
--0.5 -25 ---
2.4 --30 70 450 1400
V V V A A s s
VST(high) VST(low)
5.0 --
6 --
-0.4
V
8) 9)
Add IST, if IST > 0, add IIN, if VIN>5.5 V Short circuit current limit for max. duration of td(SC) max=450 s, prior to shutdown 10) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 6). 11) If a ground resistor R GND is used, add the voltage drop across this resistor.
Semiconductor Group
4
BTS 410 F2 Truth Table
Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H
12)
Status 412 B2 H H L H H L L H L L L14) L14) L L 410 D2 H H H L H L H H (L13)) L L L14) L14) L L 410 E2/F2 H H H L H L H H (L13)) L L H H H H 410 G2 H H H L H H H H (L13)) L L H H H H 410 H2 H H L H H L L H L L H H H H
H L L H H L L L L L L
X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
12)
Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for open load detection. 13) Low resistance short V to output may be detected in ON-state by the no-load-detection bb 14) No current sink capability during undervoltage shutdown
Semiconductor Group
5
BTS 410 F2
Terms
Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND I GND VOUT
OUT
Short circuit detection
Fault Condition: VON > 8.5 V typ.; IN high
3 IN Vbb IL PROFET OUT 5 VON
V ON + V bb
Logic unit
Short circuit detection
Input circuit (ESD protection)
R IN I
Inductive and overvoltage output clamp
+ V bb V Z
ESDZDI1 ZDI2 GND
VON
I
I
OUT GND
PROFET
ZDI1 6 V typ., ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode V clamped to 68 V typ. ON may result in a drift of the zener voltage (increase of up to 1 V).
Overvolt. and reverse batt. protection Status output
V + V bb Z2
+5V
R IN
IN
R ST(ON)
Logic
ST
R ST
ST V
Z1
PROFET
GND
GND
ESDZD
R GND
Signal GND ESD-Zener diode: 6 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 , RIN, to be used as voltage clamp at DC conditions. RST= 15 k Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
Semiconductor Group
6
BTS 410 F2
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN high
+ V bb
Vbb disconnect with energized inductive load
3 high 2 IN Vbb PROFET OUT
ON
VON
4
5
ST GND 1
OUT
Logic unit
Open load detection
V
bb
Normal load current can be handled by the PROFET itself.
GND disconnect
3
Vbb disconnect with charged external inductive load
S high IN 3 Vbb PROFET OUT
2
IN
Vbb PROFET OUT
2
5
D
5
4
ST GND 1
4 V bb V IN V ST
ST GND 1 V GND
V bb
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.
If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.
GND disconnect with GND pull up
3 IN Vbb PROFET 4 ST GND 1 V V bb V IN ST V OUT
Inductive Load switch-off energy dissipation
E bb E AS V bb PROFET OUT EL GND ZL ELoad
2
5
IN
=
ST
GND
{
L RL ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.
Energy stored in load inductance:
EL = 1/2*L*I L
While demagnetizing load inductance, the energy dissipated in PROFET is
2
EAS= Ebb + EL - ER= VON(CL)*iL(t) dt,
Semiconductor Group
7
BTS 410 F2
with an approximate solution for RL > 0 :
EAS=
IL* L IL*RL *(V + |VOUT(CL)|)* ln (1+ ) |VOUT(CL)| 2*RL bb Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T ZthJC [K/W] 10
Maximum allowable load inductance for a single switch off
L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0
L [mH]
10000
1
1000
0.1
D= 0.5 0.2 0.1 0.05 0.02 0.01 0
0.01 1E-5 100 1.5 1.75 2 2.25 2.5 2.75 3
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s] IL [A]
Semiconductor Group
8
BTS 410 F2 Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 in GND connection, protection against loss of ground Type Logic version
BTS 412 B2 410D2 410E2 410F2 410G2 410H2 B X D X X E F X X X X X X X X X X X X X X X X X X X X X X X X -18) X X X X X X X X X X X X X X X -18) X X X X X X -18) X X X X X -18) X X X X X X X X X X X X X X X X X X X X X G H X X X X 307 308
Overtemperature protection with hysteresis Tj >150 C, latch function15)16) Tj >150 C, with auto-restart on cooling Short circuit to GND protection
switches off when VON>3.5 V typ. and Vbb> 7 V typ15) (when first turned on after approx. 150 s) switches off when VON>8.5 V typ.15) (when first turned on after approx. 150 s) Achieved through overtemperature protection
Open load detection
in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X
Undervoltage shutdown with auto restart Overvoltage shutdown with auto Status feedback for
overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage
restart17)
Status output type
CMOS Open drain
Output negative voltage transient limit
(fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X X X X X X X X X X X X X X X X X
Load current limit
high level (can handle loads with high inrush currents) low level (better protection of application)
Protection against loss of GND
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 16) With latch function. Reseted by a) Input low, b) Undervoltage 17) No auto restart after overvoltage in case of short circuit 18) Low resistance short V to output may be detected in ON-state by the no-load-detection bb
15)
Semiconductor Group
9
BTS 410 F2
Timing diagrams
Figure 1a: Vbb turn on:
IN
Figure 3a: Turn on into short circuit,
IN
t d(bb IN) V bb ST
V
VOUT td(SC) A
OUT
ST open drain t A
in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s
I
L
t
td(SC) approx. -- s if Vbb - VOUT > 8.5 V typ.
Figure 2a: Switching an inductive load
Figure 3b: Turn on into overload,
IN IN
t ST
*)
d(ST)
IL I L(SCp) I L(SCr)
V
OUT
IL I L(OL) t
ST t
Heating up may require several seconds, Vbb - VOUT < 8.5 V typ.
*) if the time constant of load is too large, open-load-status may occur
Semiconductor Group
10
BTS 410 F2
Figure 3c: Short circuit while on: Figure 5a: Open load: detection in ON-state, turn on/off to open load
IN IN
ST ST
t d(ST)
V OUT
V
OUT
IL
**) t
I
L
open t
**) current peak approx. 20 s
Figure 4a: Overtemperature, Reset if (IN=low) and (TjFigure 5b: Open load: detection in ON-state, open load occurs in on-state
IN IN t d(ST OL1) ST ST t
d(ST OL2)
V V
OUT
OUT
T
I
normal
L
open
normal
J
t t
td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ *) ST goes high , when VIN=low and TjSemiconductor Group
11
BTS 410 F2
Figure 6a: Undervoltage: Figure 7a: Overvoltage:
IN
IN
V
bb V
bb(under)
Vbb Vbb(u cp) Vbb(u rst) V
V ON(CL)
Vbb(over)
V bb(o rst)
OUT
V OUT
ST open drain t
ST
t
Figure 6b: Undervoltage restart of charge pump
VON(CL)
Figure 9a: Overvoltage at short circuit shutdown:
V on
IN
Vbb
V bb(o rst)
off-state
on-state
off-state
V
Output short to GND V OUT short circuit shutdown
bb(over)
V
V V
bb(u rst)
bb(o rst)
I
L
bb(u cp)
V bb(under) V bb
charge pump starts at Vbb(ucp) =5.6 V typ.
ST t
Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown.
Semiconductor Group
12
BTS 410 F2
Package and Ordering Code
All dimensions in mm
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS410F2 E3062A T&R: Q67060-S6103-A4
Standard TO-220AB/5
BTS 410 F2
Ordering code Q67060-S6103-A2
TO-220AB/5, Option E3043 Ordering code
BTS 410 F2 E3043 Q67060-S6103-A3
Changed since 04.96 Date Change Mar. EAS maximum rating and diagram 1997 and ZthJC diagram added ESD capability (except Input) specified to 2kV, RthJA SMD specified IL(GND high) max reduced from 10 to 1 mA Option Overview table columns for BTS307/308 added Fig. 1a: Vout-spike at Vbb-turn-on added
Semiconductor Group
13

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